| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon substrate etching method capable of reducing etching of a substrate surface in a surface direction (horizontal direction) when a recess is formed by etching an Si substrate with plasma-generated ions.SOLUTION: A silicon substrate etching method for forming a recess by etching a silicon substrate from a first surface with plasma-generated ions includes a step of ionizing a rare gas by introducing the rare gas into a reaction system. |
