| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor laser device with high power conversion efficiency.SOLUTION: A semiconductor laser device comprises: a first conductivity type semiconductor substrate; a first conductivity type clad layer laminated on the semiconductor substrate; a first optical guide layer laminated on the first conductivity type clad layer; an active layer laminated on the first optical guide layer; a second optical guide layer laminated on the active layer; and a second conductivity type clad layer laminated on the second optical guide layer. The semiconductor laser device permits a primary mode or higher-order mode in a crystal growth direction. The layer thickness of the first optical guide layer is thicker than the layer thickness of the second optical guide layer. A first conductivity type low refractive index layer having a lower refractive index than the first conductivity type clad layer is provided between the first conductivity type clad layer and the first optical guide layer. A refractive index of the second optical guide layer is higher than a refractive index of the first optical guide layer.</p> |
