| 摘要 |
<p>The method involves applying a plated electric resistive layer (3) on a metallic oxide substrate e.g. sapphire (1). A ceramic intermediate layer i.e. diffusion barrier layer (7), is applied on the resistive layer, and a self-supporting ceramic cover is adhered with a glass-ceramic i.e. passivation layer (10), that is fixed on entire surface of the intermediate layer. The glass-ceramic is doped with metal that is applied in front of the intermediate layer to a cathode of the resistive layer, where the glass-ceramic is electrically conducted beyond 750 degree Celsius. An independent claim is also included for a high-temperature sensor chip comprising an electric resistive layer.</p> |
