发明名称 FILM DEPOSITION APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of suppressing variance in quality of a formed thin film in a width direction of a long-sized film base material more than usual.SOLUTION: Gas supply means 100 and 200 for supplying gas for film deposition are constituted including a plurality of gas supply parts 120A, 120B, and 120C, and 220A, 220B, and 220C arrayed in a vacuum chamber 12 in a width direction of a film base material 16, and a supply amount adjustment part capable of adjusting gas supply amounts by the gas supply parts 120A-120C and 220A-220C, and also have measurement parts 420A, 420B, and 420C where gas partial pressure measuring means 400 of measuring partial pressure of each gas kind in the vacuum chamber 12 is installed in the width direction of the film base material 16 correspondingly to the installation positions of the gas supply parts 120A-120C and 220A-220C. Then partial pressure of gas is measured at an installation position of each of the measurement parts 420A-420C.
申请公布号 JP2015021173(A) 申请公布日期 2015.02.02
申请号 JP20130150916 申请日期 2013.07.19
申请人 NITTO DENKO CORP 发明人 NASHIKI TOMOTAKE;HAMADA AKIRA
分类号 C23C14/54 主分类号 C23C14/54
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