| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist composition for a semiconductor manufacturing process, which exhibits high sensitivity and resolution, small line edge roughness (LER), an excellent pattern profile, excellent temporal stability and little outgassing in a process of forming an ultrafine pattern having a line width of 50 nm or less.SOLUTION: The resist composition for a semiconductor manufacturing process contains a compound (A) expressed by general formula (I) below. In general formula (I), Rrepresents an alkyl group, a cycloalkyl group or an aryl group; Rrepresents a monovalent organic group; Rto Reach represent a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or a halogen atom, and Rand R, Rand R, or Rand Rmay be bonded to each other to form an aliphatic ring or an aromatic ring; and X represents an oxygen atom or a sulfur atom. |
