| 摘要 |
<p>A thin film transistor include a substrate, a gate electrode formed on the substrate, a buffer layer which partly covers both sides of the gate electrode, a gate insulating layer which covers the gate electrode and the buffer layer, an active layer formed on the gate insulating layer, an etch barrier layer which is formed on the active layer and has a first opening and a second opening, a source electrode which is formed on the etch barrier layer and touches the active layer through the first opening, and a drain electrode which is formed on the etch barrier layer and touches the active layer through the second opening.</p> |
