| 摘要 |
PROBLEM TO BE SOLVED: To provide an improved method of reactive ion etching.SOLUTION: A method of reactive ion etching a substrate 46 to form at least a first and a second etched features 42, 44 is disclosed. The first etched feature 42 has a greater aspect ratio (depth:width) than the second etched feature 44. In a first etching stage, the substrate 46 is etched so as to etch only the first feature 42 to a predetermined depth. Thereafter in a second etching stage, the substrate 46 is etched so as to etch both the first and the second features 42, 44 to the respective depths. A mask 40 may be applied to define apertures corresponding in shape to the features 42, 44. The region of the substrate 46 in which the second etched feature 44 is to be produced is selectively masked with a second mask material 50 during the first etching stage. The second mask material 50 is then removed prior to the second etching stage. |
