SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE

摘要

PROBLEM TO BE SOLVED: To form a film RA having an appropriate thickness in an outer peripheral part of a wafer W.SOLUTION: A substrate processing method for forming a resist liquid film by supplying a resist liquid to a surface of a wafer W comprises a coolant supply step, a chemical supply step, and a chemical diffusion step. The coolant supply step is performed before the resist liquid reaches an outer peripheral part of the wafer W, and lowers a temperature of the outer peripheral part by supplying a cooling liquid from a lower surface or/and an upper surface of the outer peripheral part of the wafer W while rotating the wafer W. The chemical supply step supplies the resist liquid onto the surface of the wafer W. The chemical diffusion step forms a resist liquid film by diffusing the resist liquid to the outer peripheral part on the wafer W.