| 摘要 |
<p>Provided is an oxide thin film transistor array board which includes a substrate, a gate electrode formed on one side of the substrate, a gate insulating layer stacked on the upper part of the gate electrode, a first IGZO layer formed in the upper part of the gate insulating layer, an IGZO layer which includes a second IGZO layer which is formed in the upper of the first IGZO and comprises a first and a second side part and a center part having an insulating property, a source electrode and a drain electrode formed in the upper part of the IGZO layer, a protection layer stacked on the array board having the source and the drain electrode, and a pixel electrode which is formed in the upper part of the protection layer and is connected to the drain electrode through a contact hole which exposes the drain electrode.</p> |
