| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a silicon carbide substrate that does not require operation or processing for suppressing transmission orientation of a defect and reduces laminate defect density by suppressing movement of transition in a silicon carbide crystal, and thus works stably a high functional semiconductor element.SOLUTION: Part of lattice position where carbon or silicon should be disposed is substituted with one or more kinds of impurity elements among carbon, silicon, oxygen, iron, cobalt, nickel, fluorine, and iodine to suppress movement of transition in a part or whole of the region (impurity addition region) of a silicon carbide substrate. An impurity concentration in the impurity addition region is set to be 0.1 ppm or more and 10 ppm or less of silicon concentration, and a boundary between the impurity addition region and an impurity non-addition region is arranged to be non-parallel with the densest face of a substrate crystal lattice to prevent the movement of transition.</p> |
