| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for high frequency that maintains airtightness and reduces insertion loss with a simple configuration.SOLUTION: A semiconductor device includes: a substrate on which a high-frequency integrated circuit is provided; a cap having a first conductive layer, a second conductive layer, an insulating layer between the first conductive layer and the second conductive layer, and conductive vias provided in the insulating layer and connecting the first conductive layer and the second conductive layer, the first conductive layer or the second conductive layer being connected to a ground potential; and a sealing wall provided between the substrate and the cap and surrounding the high-frequency integrated circuit. |
