| 摘要 |
The technical idea of the present invention is to provide a semiconductor package capable of high speed operation such as a semiconductor package using flip-chip bonding and satisfying large capacity without limitation of a chip, and a method of manufacturing the same. The semiconductor package includes: a multilayer substrate which includes a center insulating layer, an upper line layer arranged on top surface of the center insulating layer, and a first lower line layer arranged on the lower surface of the center insulating layer; a first semiconductor chip which is arranged on the upper line layer and is connected to a buried lower pad of the first lower line layer through a penetration bump which penetrates the upper line layer and the center insulating layer; and a second semiconductor chip which is stacked on the first semiconductor chip with an offset structure to protrude from the first semiconductor chip in a horizontal direction and is connected to the upper pad of the upper line layer through the bump. |
