| 摘要 |
一种非对称闸极的穿隧式电晶体，包含一基板、一第一极性部、一第二极性部、一通道部、一闸极结构及一绝缘体。该第一极性部与该第二极性部设置于该基板，该通道部连接于该第一极性部与该第二极性部之间，包含一第一区段及一第二区段；该闸极结构包含一圈绕于该第一区段周围的包围部及一覆盖于该第二区段远离该基板之一侧的平板部；该绝缘体包含一设置于该第一区段与该包围部之间的第一绝缘部及一设置于该第二区段与该平板部之间的第二绝缘部。据此，本发明藉由该闸极结构的不对称设计，令该穿隧式电晶体兼具高导通电流及低关闭电流的优点。;A tunneling transistor with an asymmetric gate includes a substrate, a first polarity portion, a second polarity portion, a channel portion, a gate structure and an insulator. The first polarity portion and the second polarity portion are formed on the substrate. The channel portion is connected between the first polarity portion and the second polarity portion, and includes a first section and a second section. The gate structure includes a surrounding portion encircling around the first section, and a flat portion covering one side of the second portion away from the substrate. The insulator includes a first insulating portion which is disposed between the first section and the surrounding portion, and a second insulating portion which is disposed between the second section and the flat portion. Through the asymmetric gate, the tunneling transistor has the advantages of a high on-state current and a low off-state current. |
