| 摘要 |
一种记忆装置及其制造方法。记忆装置包括一基板、一三维记忆阵列(3D memory array)、一周边电路(periphery circuit)以及一导电连接结构(conductive connection structure)。三维记忆阵列及周边电路堆叠设置于基板上。周边电路包括一图案化金属层及一接触结构(contact structure)，接触结构电性连接于图案化金属层。导电连接结构电性连接于图案化金属层，三维记忆阵列经由导电连接结构电性连接至周边电路。;A memory device and a manufacturing method of the same are provided.The memory device includes a substrate, a 3D memory array, a periphery circuit, and a conductive connection structure.The 3D memory array and the periphery circuit are stacked on the substrate.The periphery circuit includes a patterned metal layer and a contact structure electrically connected to the patterned metal layer. The conductive connection structure is electrically connected to the patterned metal layer.The 3D memory array is electrically connected to the periphery circuit via the conductive connection structure. |
