摘要 |
本发明的一个实施形态,目的在于提供一种能够减低暗电流的固态影像感测装置之制造方法及固态影像感测装置。;依照本发明的一个实施形态,系提供一种固态影像感测装置之制造方法。固态影像感测装置之制造方法中,于第1导电型的半导体层中将第2导电型的半导体区域以行列状二维排列,藉此形成复数个光电变换元件。以将半导体层区隔开来的方式形成俯视格子状的沟槽,藉此将光电变换元件整形成俯视矩形状。将被整形成俯视矩形状之光电变换元件,整形成比矩形的角数还多之俯视凸多角形状。藉由绝缘膜被覆沟槽的内周面后,在被绝缘膜被覆之沟槽中设置遮光构件以形成元件分离区域。; forming the photoelectric conversion elements in a rectangular shape in plan view, the photoelectric conversion elements being formed by forming a grid-like trench in plan view so as to partition the semiconductor layer; forming the photoelectric conversion element formed into the rectangular shape in plan view into a convex polygonal shape in plan view whose number of corners is larger than the number of corners of a rectangular; and forming an element isolation area including a light shielding member at a trench coated with an insulating film after coating an inner peripheral surface of the trench with the insulating film. |