| 摘要 |
<p>The invention relates to an avalanche photodiode semiconductor structure (1) for receiving electromagnetic radiation in a given wavelength range and comprising a first semiconductor area (210) suitable for absorbing the electromagnetic radiation, a second area (310) suitable for providing a multiplication of carriers, and a third semiconductor area (410) in contact with the second semiconductor area (310). The second area (310) comprises at least two subparts (321, 322), the second subpart (322) being suitable for presenting a mean carrier multiplication rate that is greater than that of the first subpart (321). The invention also relates to a method for manufacturing such a structure (1).</p> |
