发明名称 FILM FORMATION APPARATUS AND FILM FORMATION METHOD
摘要 <p>A film formation apparatus includes a film formation source, a quartz oscillator for measurement, and a quartz oscillator for calibration. When a thin film of a film forming material is formed on a film formation object, the film forming material is heated in the film formation source to release vapors thereof. The quartz oscillator for measurement measures the amount of the film forming material formed on the film formation object, while the quartz oscillator for calibration calibrates the quartz oscillator for measurement. In the film formation apparatus, there are further provided a moving part for moving the film formation source between a predetermined film formation waiting position and a predetermined film forming position with respect to the film formation object and a temperature control part for controlling a temperature of the quartz oscillator for measurement and a temperature of the quartz oscillator for calibration to be substantially the same.</p>
申请公布号 KR101487954(B1) 申请公布日期 2015.01.30
申请号 KR20110110888 申请日期 2011.10.28
申请人 发明人
分类号 C23C14/24;C23C14/54 主分类号 C23C14/24
代理机构 代理人
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