发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
摘要 |
The present invention provides a semiconductor device which can improve a breakdown voltage and can reduce the device size. A semiconductor device according to the present invention includes an emitter electrode and a first field plate disposed on one surface of a substrate and spaced apart from each other, a collector electrode disposed on the other surface of the substrate, a trench gate disposed in the substrate, a field diffusion junction disposed in the substrate, and a first contact connecting the trench gate and the first field plate. The first field plate has a first part extending toward the emitter electrode with respect to the first contact and having a first width, and a second part extending toward the field diffusion junction with respect to the first contact and having a second width. The second width is greater than the first width. |
申请公布号 |
KR20150011185(A) |
申请公布日期 |
2015.01.30 |
申请号 |
KR20130086137 |
申请日期 |
2013.07.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, JAE HOON;KIM, TAE GEUN;PARK CHAN HO;HER, HYUN JUNG |
分类号 |
H01L29/739;H01L21/331 |
主分类号 |
H01L29/739 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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