| 摘要 |
<p>Disclosed is a nitride-based semiconductor device. The nitride-based semiconductor device includes: a barrier structure which is formed on a substrate and includes a first semiconductor layer of a first conductive type, a second semiconductor layer of a second conductive type which is formed on the first semiconductor layer, a third semiconductor layer of the first conductive type which is formed on the second semiconductor layer, and a fourth semiconductor layer of the second conductive type which is formed on the third semiconductor layer; a nitride semiconductor layer which is formed on the barrier structure and includes a two-dimensional electron gas (2DEG) channel inside; and source, drain, and gate electrodes which are formed on the nitride semiconductor layer and are separately arranged.</p> |
