| 摘要 |
<p>A bulk & SOI hybrid CMIS device, in which an I/O bulk part and a core logic SOI part are mounted, needs a number of gate stacks to optimize threshold voltage control and causes a problem that the process and structure become complicated. The present invention adjusts the threshold voltage of MISFET at the corresponding part by introducing impurities into any of back gate semiconductor regions, in an SOI semiconductor CMISFET integrated circuit device having a high-k gate insulating film and a metal gate electrode.</p> |
