| 摘要 |
The present invention provides a method for manufacturing a silicon single crystal according to a Czochralski method: bringing a sharp end of a seed crystal into contact with a silicon melt; melting the seed crystal from the end up to a position at which the seed crystal has a predetermined diameter; growing the silicon single crystal without a Dash-Necking process, wherein the seed crystal is melted while a crucible is rotated at a rotational speed of 2 rpm or less, and the rotational speed of the crucible is decelerated to below the rotational speed at the time of the melting within 10 minutes after an end of the melting and a start of the crystal growth. The method avoids reduction in success rate for dislocation-free single crystal growth in manufacture of a heavy, large-diameter ingot and improves the productivity by the dislocation-free seeding method without the necking process. |
