| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a composition for a ferroelectric thin film for improving a relative permittivity largely than in a conventional ferroelectric thin film with a simple method and suitable to usage of a thin-film capacitor having high capacity density: and to provide a method for ferroelectric thin film formation and a ferroelectric thin film formed by this method. <P>SOLUTION: The composition for ferroelectric thin film formation for forming one kind of ferroelectric thin film selected from a group consisting of PLZT, PZT and PT is a liquid composition for forming a thin film of a mode of a mixed composite metal oxide in which a composite metal oxide B containing Bi is mixed into a composite metal oxide A represented by general formula (Pb<SB>x</SB>La<SB>y</SB>)(Zr<SB>z</SB>Ti<SB>(1-z)</SB>O<SB>3</SB>), wherein 0.9<x<1.3, 0≤y<0.1, 0≤z<0.9. The composition consists of an organic metal compound solution in which the materials are each diluted in an organic solvent so that metal atom ratio represented by the formula may be given. <P>COPYRIGHT: (C)2010,JPO&INPIT |
