| 摘要 |
<p>A manufacturing method of a semiconductor device in which the threshold voltage is corrected is provided. In a semiconductor device including a plurality of transistors, each transistor includes a semiconductor, a source or drain electrode electrically connected to the semiconductor, a gate electrode, and a charge trap layer between the gate electrode and the semiconductor. Electrons are trapped in the charge trap layer by performing heat treatment and, simultaneously, keeping a potential of the gate electrode higher than that of the source or drain electrode for one second or more. By this process, the threshold increases and Icut decreases. To this end, a circuit for supplying a signal to the gate electrode and a circuit for supplying a signal to the source or drain electrode are electrically separated from each other, and the process is performed in a state, in which the potential of the former circuit is set higher than the potential of the latter circuit.</p> |
