TWO-ELECTRODE STRUCTURE BASED ON SEMICONDUCTOR FABRICATION TECHNIQUES

摘要

The present invention relates to a two-electrode structure based on a semiconductor fabrication technique. In an electric-field-applying type fine pattern two-electrode structure for a vacuum electronic device, the two-electrode structure is easily manufactured at low process cost and satisfies high process accuracy, and also can secure the stability of property control in an electromagnetic wave process through a stable silicon photonic crystal lattice.