| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide: a method for cleaning a thin film formation apparatus, the method removing extraneous matter adhering to the inside of the apparatus while suppressing the deterioration of a component in the apparatus; a thin film formation apparatus; and a program. <P>SOLUTION: A control part 100 of a heat treatment apparatus 1 maintains the inside of a reaction chamber at a temperature at which water can exist as a liquid film, for example, at room temperature. The control part 100 sets the inside of the reaction chamber at 53,200 Pa. When the inside of a reaction tube 2 is stabilized at predetermined pressure and temperature, the control part 100 introduces a cleaning gas comprising hydrogen fluoride and nitrogen into the reaction tube 2 from a treatment gas introduction tube 17 to remove a reaction product adhering to the interior of the apparatus. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
