GROUP III NITRIDE SEMICONDUCTOR LASER ELEMENT, AND METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LASER ELEMENT

摘要

Provided is a the method of fabricating the III-nitride semiconductor laser, which can improve the flatness of the cavity mirrors in the III-nitride semiconductor laser device and which can reduce the threshold current. The substrate product SP is positioned with respect to the edge 71b of the support device 71 such that the orientation of the scribed groove 65a of the substrate product SP1 is aligned with the direction in which the edge 71 b of the support device 71 extends. The substrate product SP is divided into a first region 70a and a second region 70b with respect to the reference line (X-coordinate A1) that extends along the edge 71b. The breakup of the substrate product SP by the press on the second region 70b is implemented while supporting the first region 70a by the support device 71, thereby forming the other substrate product SP1 and the laser bar LB 1. The direction of the edge 69a of the breaking device 69 is aligned with the direction that the edge 71b extends, and the edge 69a of the breaking device 69 is pressed on the substrate product SP from a direction intersecting with the second surface 63b.