| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a liquid phase epitaxial growth method for a bismuth (Bi) substituted rare earth-iron-garnet film (RIG film), which is intended for short wavelength and prevented from radial linear cracks occurring on the surface of an obtained RIG film when a Bi substituted rare earth-iron-garnet film with a thin film thickness is selected for a garnet substrate with a thin plate thickness. <P>SOLUTION: In the liquid phase epitaxial growth method wherein the garnet substrate is brought into contact with the surface of a flux liquid dissolving RIG film components to grow the RIG film, a plate thickness of the garnet substrate is 200-350μm, and a film thickness of the RIG film is 100-300μm. When the plate thickness of the garnet substrate is T (μm) and the film thickness of the RIG film is t (μm), following relationship (numerical formula 1) is satisfied in addition to the above requirements: -2T+700 (μm)≤t≤-4T+1,500 (μm). <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
