Transistor comprising ZnO based channel layer

摘要

Disclosed are a channel layer and a transistor including the channel layer. The channel layer may include a multi-layered structure. Layers forming the channel layer may have different mobilities and/or carrier densities. The channel layer may have a double layered structure including a lower layer and an upper layer which may be formed of different oxides. Characteristics of the transistor may vary according to materials used to form the lower layer and the upper layer and thickness thereof.