| 摘要 |
Process for increasing silicon deposition rates from silicon halide-hydrogen reaction gases wherein electronic-grade silicon bodies are produced from the deposition of silicon upon silicon slim rods heated and introduced into and pulled through a chemical vapor deposition chamber, the increased silicon deposition rates resulting from introducing small percentages by weight of silane to the silicon halide-hydrogen reaction gases, for example, silicon tetrachloride and/or trichlorosilane.
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