FABRICATION METHOD OF COMPOUND SEMICONDUCTOR SOLLAR CELL USING TRANSPARENT CONDUCTIVE OXIDE AND COMPOUND SEMICONDUCTOR SOLLAR CELL THEREBY

摘要

The present invention relates to a compound semiconductor solar cell. A method for manufacturing a compound semiconductor solar cell, which comprises a photoelectric conversion cell formed on a substrate, a window layer formed on the upper part of the photoelectric conversion cell, a cap layer formed on the upper part of the window layer, and a grid electrode, includes the steps of: wet-etching a first photosensitive film as a mask on the window layer to form a cap layer; forming a second photosensitive film for n-metal layer patterning on the window layer and forming an n-metal layer on the cap layer; forming a protective layer including a transparent conductive oxide on the window layer and the n-metal layer; depositing a seed metal layer on the upper layer of the protective layer; and forming a third photosensitive film for grid electrode patterning on the seed metal layer, forming a grid electrode on the seed metal layer of the cap layer, and removing the seed metal layer in an area including the window layer and the protective layer. The method is capable of: providing high quality compound semiconductor solar cell by inhibiting galvanic effects; preventing degradation of efficiency of the compound semiconductor solar cell due to damage to the window layer and the cap layer by using the transparent conductive oxide film as the protective layer of the window layer and the cap layer; and improving efficiency of the compound semiconductor solar cell by preventing damage to the window layer and the cap layer by the protective layer when the seed metal layer is wet-etched to form the grid electrode after the cap layer is formed.