发明名称 |
FABRICATION OF SEMICONDUCTOR STRUCTURE |
摘要 |
FIELD: process engineering.SUBSTANCE: invention relates to semiconductor technology, particularly, to production of semiconductor structures with lower density of defects. Silicon structures are processes at sapphire with silicon epi by hydrogen ions in inert medium at energy of 25-30 keV in amount of (3-5)·10H/cmwith subsequent thermal annealing at 1000°C for 30-60 minutes.EFFECT: decreased density of defects, perfected structure parameters, higher quality and yield.1 tbl |
申请公布号 |
RU2539789(C1) |
申请公布日期 |
2015.01.27 |
申请号 |
RU20130127359 |
申请日期 |
2013.06.14 |
申请人 |
FEDERAL'NOE GOSUDARSTVENNOE BJUDZHETNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSIONAL'NOGO OBRAZOVANIJA KABARDINO-BALKARSKIJ GOSUDARSTVENNYJ UNIVERSITET IM. KH.M. BERBEKOVA |
发明人 |
MUSTAFAEV GASAN ABAKAROVICH;MUSTAFAEV ABDULLA GASANOVICH;MUSTAFAEV ARSLAN GASANOVICH;CHERKESOVA NATAL'JA VASIL'EVNA |
分类号 |
H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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