发明名称 THIN-FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
摘要 <p>A thin film transistor substrate includes: a gate pattern which includes a base substrate, a gate line formed on the base substrate, and a gate electrode connected to the gate line; a data line intersecting with the gate line; a source pattern which includes a source electrode connected to the data line, and a drain electrode separated from the source electrode; and a buffer pattern formed on the source pattern. The buffer pattern is formed on the source/drain electrode. The re-sputtering of Cu due to a plasma process is prevented before a passivation layer is formed, thereby preventing the contamination of CVD equipment.</p>
申请公布号 KR20150009241(A) 申请公布日期 2015.01.26
申请号 KR20130083438 申请日期 2013.07.16
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 KIM, CHEOL KYU;HA, HEON SIK
分类号 H01L29/786;H01L21/336 主分类号 H01L29/786
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