发明名称 |
THIN-FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
<p>A thin film transistor substrate includes: a gate pattern which includes a base substrate, a gate line formed on the base substrate, and a gate electrode connected to the gate line; a data line intersecting with the gate line; a source pattern which includes a source electrode connected to the data line, and a drain electrode separated from the source electrode; and a buffer pattern formed on the source pattern. The buffer pattern is formed on the source/drain electrode. The re-sputtering of Cu due to a plasma process is prevented before a passivation layer is formed, thereby preventing the contamination of CVD equipment.</p> |
申请公布号 |
KR20150009241(A) |
申请公布日期 |
2015.01.26 |
申请号 |
KR20130083438 |
申请日期 |
2013.07.16 |
申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
KIM, CHEOL KYU;HA, HEON SIK |
分类号 |
H01L29/786;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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