| 摘要 |
A photoresist composition includes a polymer with multiple repeat units having the structure: wherein R1 and R2 are independently hydrogen, unsubstituted or substituted C1-18 linear or branched alkyl, unsubstituted or substituted C3-18 cycloalkyl, unsubstituted or substituted C6-18 aryl, or unsubstituted or substituted C3-18 heteroaryl; and R1 and R2 are optionally covalently linked to each other to form a ring that includes -R1-C-R2-; each of Ar1, Ar2, and Ar3 is independently unsubstituted or substituted C6-18 arylene, or unsubstituted or substituted C3-18 heteroarylene. In addition to the polymer, the photoresist composition includes a photoactive component selected from photoacid generators, photobase generators, photoinitiators, and combinations thereof. |
