SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

The present invention relates to a semiconductor device capable of improving the threshold voltage of a transistor. The semiconductor device includes: a substrate which includes a first active region, a second active region, and a field region directly touched between the first active region and the second active region; and a gate structure which crosses the first active region, the second active region, and the field region, on the substrate. The gate structure includes a p-type metal gate electrode and an n-type metal gate electrode to directly connect with each other. The p-type metal gate electrode is formed on the first active region. The n-type metal gate electrode is formed on the second active region. The contact surface of the p-type metal gate electrode and the n-type metal gate electrode is closer to the first active region than the second active region.