发明名称 SYSTEMS, METHODS, AND APPARATUS FOR MINIMIZING CROSS COUPLED WAFER SURFACE POTENTIALS
摘要 This disclosure describes systems, methods, and apparatus for reducing a DC bias on a substrate surface in a plasma processing chamber due to cross coupling of RF power to an electrode coupled to the substrate. This is brought about via tuning of a resonant circuit coupled between the substrate and ground based on indirect measurements of harmonics of the RF field level at a surface of the substrate. The resulting reduction in DC bias allows a lower ion energy than possible without this resonant circuit and tuning thereof.
申请公布号 WO2015010001(A1) 申请公布日期 2015.01.22
申请号 WO2014US47162 申请日期 2014.07.18
申请人 ADVANCED ENERGY INDUSTRIES, INC. 发明人 HOFFMAN, DANIEL, J.;BROUK, VICTOR
分类号 H03H7/00;G01S3/02;H05H7/18 主分类号 H03H7/00
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