发明名称 |
SYSTEMS, METHODS, AND APPARATUS FOR MINIMIZING CROSS COUPLED WAFER SURFACE POTENTIALS |
摘要 |
This disclosure describes systems, methods, and apparatus for reducing a DC bias on a substrate surface in a plasma processing chamber due to cross coupling of RF power to an electrode coupled to the substrate. This is brought about via tuning of a resonant circuit coupled between the substrate and ground based on indirect measurements of harmonics of the RF field level at a surface of the substrate. The resulting reduction in DC bias allows a lower ion energy than possible without this resonant circuit and tuning thereof. |
申请公布号 |
WO2015010001(A1) |
申请公布日期 |
2015.01.22 |
申请号 |
WO2014US47162 |
申请日期 |
2014.07.18 |
申请人 |
ADVANCED ENERGY INDUSTRIES, INC. |
发明人 |
HOFFMAN, DANIEL, J.;BROUK, VICTOR |
分类号 |
H03H7/00;G01S3/02;H05H7/18 |
主分类号 |
H03H7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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