发明名称 CRUCIBLE FOR CRYSTAL GROWTH, AND SINGLE CRYSTAL-PRODUCING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a crucible for crystal growth capable of growing a single crystal of a higher quality.SOLUTION: A crucible 10 for crystal growth comprises: a seed crystal holding part 11 for holding a seed crystal; and a crystal growing part 12 connected to the seed crystal holding part 11 and having a space 12b for the crystal growth on the side of an inner face 12a. The inner face 12a of the crystal growing part 12 has a surface roughness of 0.1μm to 3.0μm. According to this crucible 10 for the crystal growth, it is possible to grow a single crystal of a higher quality.</p>
申请公布号 JP2015013781(A) 申请公布日期 2015.01.22
申请号 JP20130142441 申请日期 2013.07.08
申请人 SUMITOMO ELECTRIC IND LTD 发明人 TANIZAKI KEISUKE;NAMIKAWA YASUO;SAKAMOTO TOSHIHIRO;MORISHITA MASANORI
分类号 C30B11/00 主分类号 C30B11/00
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