发明名称 |
CRUCIBLE FOR CRYSTAL GROWTH, AND SINGLE CRYSTAL-PRODUCING METHOD |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a crucible for crystal growth capable of growing a single crystal of a higher quality.SOLUTION: A crucible 10 for crystal growth comprises: a seed crystal holding part 11 for holding a seed crystal; and a crystal growing part 12 connected to the seed crystal holding part 11 and having a space 12b for the crystal growth on the side of an inner face 12a. The inner face 12a of the crystal growing part 12 has a surface roughness of 0.1μm to 3.0μm. According to this crucible 10 for the crystal growth, it is possible to grow a single crystal of a higher quality.</p> |
申请公布号 |
JP2015013781(A) |
申请公布日期 |
2015.01.22 |
申请号 |
JP20130142441 |
申请日期 |
2013.07.08 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
TANIZAKI KEISUKE;NAMIKAWA YASUO;SAKAMOTO TOSHIHIRO;MORISHITA MASANORI |
分类号 |
C30B11/00 |
主分类号 |
C30B11/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|