SEMICONDUCTOR DEVICE HAVING LOCAL BURIED OXIDE

摘要

There is set forth herein a semiconductor device fabricated on a bulk wafer having a local buried oxide region underneath a channel region of a MOSFET. In one embodiment the local buried oxide region can be self-aligned to a gate, and a source/drain region can be formed in a bulk substrate. A local buried oxide region can be formed in a semiconductor device by implantation of oxygen into a bulk region of the semiconductor device followed by annealing.

主权项

1. A semiconductor device comprising: a substrate;
a local buried oxide region formed in the substrate; a gate aligned with the local buried oxide region; a channel defined in the substrate between the gate and the local buried oxide region, the channel having a first end and a second end: a source defined at the first end of the channel; and a drain defined at the second end of the channel.