发明名称 |
Methods for Manufacturing Isolated Deep Trench and High-Voltage LED Chip |
摘要 |
A method for manufacturing a deep isolation trench (221) and a method for manufacturing a high-voltage LED chip. Steps of the method for manufacturing a deep isolation trench (221) are as follows: forming a mask layer (202) on a substrate (200), and forming, in the mask layer, through etching, multiple windows (204) isolated from each other, the bottom of each window exposing the substrate; with epitaxial lateral overgrowth, forming an epitaxial structure (212) inside each window and a part of the mask layer around the window, respectively, each epitaxial structure having a trapezoidal cross section with a long bottom and a short top, and a gap between adjacent epitaxial structures forming a first deep trench (214); etching each epitaxial structure, forming a first shoulder (218) and a second shoulder (221) at both sides of each epitaxial structure, respectively, and forming a deep isolation trench above the mask layer between the adjacent epitaxial structures. The method for manufacturing a high-voltage LED chip is capable of decreasing preparation cost of the deep isolation trench in the high-voltage LED chip, and increasing continuity and compactness interconnection performance of an insulation isolation dielectric layer and an interconnection electrode layer between deep isolation trenches within a high-voltage LED chip. |
申请公布号 |
US2015024524(A1) |
申请公布日期 |
2015.01.22 |
申请号 |
US201314383065 |
申请日期 |
2013.03.01 |
申请人 |
ENRAYTEK OPTOELECTRONICS CO., LTD. |
发明人 |
Yao Lujun;Xiao Deyuan;Chang Richard Ru-Gin;Yu Hongbo |
分类号 |
H01L33/00;H01L33/42;H01L33/44;H01L33/06 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming deep isolation trenches, comprising the steps of:
providing a substrate, forming a mask layer over a surface of the substrate and etching the mask layer to form therein a plurality of windows, wherein the plurality of windows are spaced from one another and each of the plurality of windows exposes the underlying substrate; performing an epitaxial lateral overgrowth process to form epitaxial structures, each filling, and covering a portion of the mask layer surrounding, a corresponding one of the plurality of windows, so that a first deep trench is formed between each pair of adjacent ones of the epitaxial structures, wherein each of the epitaxial structures has a trapezoid-shaped cross section that is broad at the bottom and narrow at the top, and each of the epitaxial structures includes an n-type nitride layer, a multi-quantum-well layer and a p-type nitride layer from the bottom upward; and etching each of the epitaxial structures to form a first shoulder on one end thereof and a second shoulder on the other end thereof, wherein each of the first and second shoulders is formed by etching through the p-type nitride layer and the multi-quantum-well layer and stops in the n-type nitride layer, so that a deep isolation trench is formed over the mask layer and between each pair of adjacent ones of the epitaxial structures. |
地址 |
Shanghai CN |