LIGHT EMITTING DIODES WITH QUANTUM DOT PHOSPHORS

摘要

A quantum well-based p-i-n light emitting diode is provided that includes nanopillars with an average linear dimension of between 50 nanometers and 1 micron. The nanopillars include a laminar layer of quantum wells capable of non-radiative energy transfer to quantum dot nanocrystals. Quantum dot-Quantum well coupling through the side walls of the nanopillar-configured LED structure achieves a close proximity between quantum wells and quantum dots while retaining the overlying contact electrode structures. An white LED with attractive properties relative to conventional incandescent and fluorescence lighting devices is produced.

主权项

1. A light emitting diode comprising:
a substrate; a cathode having at least one cathode contact, said cathode directly or indirectly layered on said substrate; an electron transport layer comprising of a SiC n-type material directly or indirectly layered on said cathode; a hole injection layer comprising of a silicon carbide (SiC) p-type material directly or indirectly layered on said electron transport layer forming a p-n homojunction therebetween; an array of holes etched in said p-type layer; a plurality of quantum dot phosphors, wherein said array of holes etched in the p-type layer are infiltrated with said plurality of quantum dot phosphors; an anode having at least one anode contact, said anode directly or indirectly layered on said substrate; and a hole injection layer comprising of a silicon carbide (SiC) p-type material directly or indirectly layered on said hole injection layer.