| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a three-dimensional memory appropriate for microfabrication.SOLUTION: A nonvolatile semiconductor storage device according to an embodiment comprises: a fin structure Fin which has first through n-th (n is a natural number of more than one) semiconductor layers 12-1,...12-4 and a hard mask layer 14a; and first through n-th NAND columns S1,...S4 formed on surfaces of the first through n-th semiconductor layers 12-1,...12-4 in a third direction, respectively. Each of the NAND columns S1,...S4 includes a plurality of series-connected memory cells MC and each of the plurality of memory cells MC includes a charge storage layer. The charge storage layers of the plurality of memory cells MC are isolated from each other. The hard mask layer 14a includes an oxide or a nitride of an element selected from Al, Hf, Ta, Ti and W.</p> |
