METHODS OF FORMING SEMICONDUCTOR DEVICE WITH SELF-ALIGNED CONTACT ELEMENTS AND THE RESULTING DEVICES

摘要

One method disclosed herein includes forming a sacrificial etch stop material in a recess above a replacement gate structure, with the sacrificial etch stop material in position, forming a self-aligned contact that is conductively coupled to the source/drain region, after forming the self-aligned contact, performing at least one process operation to expose and remove the sacrificial etch stop material in the recess so as to thereby re-expose the recess, and forming a third layer of insulating material in at least the re-exposed recess.

主权项

1. A method of forming a transistor, comprising:
forming a recess above a recessed replacement gate structure that is positioned at least partially within a gate cavity that is laterally defined by sidewall spacers positioned in a first layer of insulating material; forming a sacrificial etch stop material in said recess; forming a second layer of insulating material above at least said sacrificial etch stop material and said first layer of insulating material; with said sacrificial etch stop material in position, performing at least one first etching process to form a self-aligned contact opening that extends through at least said second layer of insulating material and said first layer of insulating material and thereby exposes a source/drain region of said transistor; with said sacrificial etch stop material in position, forming a self-aligned contact in said self-aligned contact opening that is conductively coupled to said source/drain region; after forming said self-aligned contact, performing at least one process operation to expose and remove said sacrificial etch stop material in said recess so as to thereby re-expose said recess; and forming a third layer of insulating material in at least said re-exposed recess.