SEMICONDUCTOR DEVICE

摘要

According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a first control electrode, a first electrode, a second control electrode, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, and a first insulating film. The first control electrode is provided on or above the first semiconductor region. The first electrode is provided on the first control electrode. The second control electrode is provided on or above the first semiconductor region and includes a first portion which is beside the first control electrode and a second portion which is provided on the first portion and beside the first electrode. The second semiconductor region is provided on the first semiconductor region. A boundary between the first semiconductor region and the second semiconductor region is above the lower end of the first electrode.

主权项

1. A semiconductor device, comprising:
a first semiconductor region of a first conductivity type; a first control electrode provided on or above the first semiconductor region; a first electrode provided on the first control electrode; a second control electrode provided on or above the first semiconductor region and including a first portion and a second portion, the first portion being beside the first control electrode, the second portion being provided on the first portion and beside the first electrode; a second semiconductor region of a second conductivity type provided on the first semiconductor region, a boundary between the first semiconductor region and the second semiconductor region being above the lower end of the first electrode; a third semiconductor region of the first conductivity type provided on the second semiconductor region; a first insulating film provided between the second semiconductor region and the second portion; a second insulating film provided between the second semiconductor region and the first control electrode; a second electrode electrically connected to the third semiconductor region and the first electrode; a third electrode electrically connected to the first semiconductor region; and a contact region of the second conductivity type provided between the second semiconductor region and the second electrode to be electrically connected to the second electrode.