LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME

摘要

In a light emitting element, a semiconductor layer including a light emitting layer is stacked on a GaN substrate 11, and a surface of the GaN substrate 11 opposite to the stacked semiconductor layer serves as a main light emission surface S. At the main light emission surface S, quadrangular pyramid shaped protrusions 11a which are continuously arranged and whose standing direction F2 is displaced from a stacking direction of the semiconductor layer are formed. In each protrusion 11a, fine asperities are, by etching, preferably formed at least at an inclined surface having a small inclination angle. Moreover, each protrusion 11a may be in a truncated shape, but is preferably formed in a pointed shape.

主权项

1. A light emitting element in which a semiconductor layer including a light emitting layer is stacked on a substrate and in which a surface of the substrate opposite to the stacked semiconductor layer serves as a main light emission surface, comprising:
protrusions continuously arranged on the main light emission surface, wherein a standing direction of each protrusion is displaced from a stacking direction of the semiconductor layer.