发明名称 |
LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A high-quality light emitting device is provided which has a long-lasting light emitting element free from the problems of conventional ones because of a structure that allows less degradation, and a method of manufacturing the light emitting device is provided. After a bank is formed, an exposed anode surface is wiped using a PVA (polyvinyl alcohol)-based porous substance or the like to level the surface and remove dusts from the surface. An insulating film is formed between an interlayer insulating film on a TFT and the anode. Alternatively, plasma treatment is performed on the surface of the interlayer insulating film on the TFT for surface modification. |
申请公布号 |
US2015021588(A1) |
申请公布日期 |
2015.01.22 |
申请号 |
US201414511198 |
申请日期 |
2014.10.10 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAGATA Hirokazu;YAMAZAKI Shunpei;TAKAYAMA Toru |
分类号 |
H01L51/52 |
主分类号 |
H01L51/52 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Atsugi-shi JP |