| 摘要 |
<p>The present invention relates to a semiconductor memory device capable of increasing the redundancy efficiency and a memory system including the semiconductor memory device. The semiconductor memory device includes: a first memory unit and a second memory unit respectively including multiple memory cells and page buffers corresponding to the memory cells; and a redundancy memory unit including multiple redundancy memory cells and redundancy page buffers corresponding to the redundancy memory cells. First I/O data lines connected to the first memory unit and second I/O data lines connected to the second memory unit are also connected to the redundancy memory unit.</p> |
