发明名称 |
CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a chemically amplified positive resist composition which can give uniform distribution of a base, can control diffusion of the base, can improve line edge roughness as well as suppress temperature dependency, and promises high resolution in the process of forming a resist pattern where an ultrafine pattern is demanded.SOLUTION: The chemically amplified positive resist composition comprises: a polymeric compound (PB) having a recurring unit having a phenolic hydroxyl group and a recurring unit of a nitrogen-containing structure; and a polymeric compound (PA) having a photo-acid generating recurring unit and a recurring unit having an acidic side chain protected with an acid labile protective group. |
申请公布号 |
JP2015014798(A) |
申请公布日期 |
2015.01.22 |
申请号 |
JP20140162556 |
申请日期 |
2014.08.08 |
申请人 |
SHIN ETSU CHEM CO LTD |
发明人 |
MASUNAGA KEIICHI;WATANABE SATOSHI;TANAKA HARUYORI;DOMON DAISUKE |
分类号 |
G03F7/039;C08F212/14;C08F212/32;C08F220/30;C08F220/34;C08F220/38;G03F7/004;H01L21/027 |
主分类号 |
G03F7/039 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|