发明名称 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a chemically amplified positive resist composition which can give uniform distribution of a base, can control diffusion of the base, can improve line edge roughness as well as suppress temperature dependency, and promises high resolution in the process of forming a resist pattern where an ultrafine pattern is demanded.SOLUTION: The chemically amplified positive resist composition comprises: a polymeric compound (PB) having a recurring unit having a phenolic hydroxyl group and a recurring unit of a nitrogen-containing structure; and a polymeric compound (PA) having a photo-acid generating recurring unit and a recurring unit having an acidic side chain protected with an acid labile protective group.
申请公布号 JP2015014798(A) 申请公布日期 2015.01.22
申请号 JP20140162556 申请日期 2014.08.08
申请人 SHIN ETSU CHEM CO LTD 发明人 MASUNAGA KEIICHI;WATANABE SATOSHI;TANAKA HARUYORI;DOMON DAISUKE
分类号 G03F7/039;C08F212/14;C08F212/32;C08F220/30;C08F220/34;C08F220/38;G03F7/004;H01L21/027 主分类号 G03F7/039
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