发明名称 Method For Implant Productivity Enhancement
摘要 A method of processing a workpiece is disclosed, where the ion chamber is first coated with the desired dopant species and another species. Following this conditioning process, a feedgas, which comprises fluorine and the desired dopant, is introduced to the chamber and ionized. Ions are then extracted from the chamber and accelerated toward the workpiece, where they are implanted without being first mass analyzed. The other species used during the conditioning process may be a Group 3, 4 or 5 element. The desired dopant species may be boron.
申请公布号 US2015024580(A1) 申请公布日期 2015.01.22
申请号 US201314090001 申请日期 2013.11.26
申请人 Varian Semiconductor Equipment Associates, Inc. 发明人 Kurunczi Peter F.;Koo Bon-Woong;Frontiero John A.;Levay William T.;Leavitt Christopher J.;Miller Timothy J.;Bhosle Vikram M.;Graff John W.;Bateman Nicholas PT
分类号 H01L21/265 主分类号 H01L21/265
代理机构 代理人
主权项 1. A method of processing a workpiece, comprising: introducing a conditioning gas into a chamber of an ion source, said conditioning gas comprising a hydride containing a desired dopant species, and a conditioning co-gas, where said conditioning co-gas comprises a noble gas, a hydride of a Group 4 element, or a hydride of a species having an opposite conductivity of said desired dopant species, where between 10% and 40% of a total volume of gas introduced comprises said conditioning co-gas; ionizing said conditioning gas and said conditioning co-gas in said chamber so as to form a coating on walls of said chamber; changing gases introduced into said chamber after said coating is formed and introducing a feedgas into said chamber, said feedgas comprising fluorine and said desired dopant species; ionizing said feedgas in said chamber to create ions; and extracting said ions from said chamber and accelerating said ions toward said workpiece, such that said ions are implanted into said workpiece without mass analysis.
地址 Gloucester MA US