| 发明名称 |
INTEGRATED CIRCUIT PACKAGE AND METHOD |
| 摘要 |
A method of forming a packaged electronic device includes fabricating a MEMS structure, such as a BAW structure, on a first semiconductor wafer substrate; forming a cavity in a second semiconductor wafer substrate; and mounting the second substrate on the first substrate such that the MEMS structure is positioned inside the cavity in the second substrate. A wafer level assembly and an integrated circuit package are also described. |
| 申请公布号 |
US2015021721(A1) |
申请公布日期 |
2015.01.22 |
| 申请号 |
US201313947235 |
申请日期 |
2013.07.22 |
| 申请人 |
Texas Instruments Incorporated |
发明人 |
Romig Matthew David;Milleron Marie-Solange Anne;Sutton Benjamin Michael |
| 分类号 |
B81B7/00;B81C1/00 |
主分类号 |
B81B7/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a wafer level package comprising:
fabricating a BAW structure on a first semiconductor wafer substrate; forming a cavity in a second semiconductor wafer substrate; and mounting the second substrate on the first substrate such that the BAW structure is positioned inside the cavity in the second substrate. |
| 地址 |
Dallas TX US |
