Low Temperature Salicide for Replacement Gate Nanowires

摘要

Techniques for integrating low temperature salicide formation in a replacement gate device process flow are provided. In one aspect, a method of fabricating a FET device is provided that includes the following steps. A dummy gate(s) is formed over an active area of a wafer. A gap filler material is deposited around the dummy gate. The dummy gate is removed selective to the gap filler material, forming a trench in the gap filler material. A replacement gate is formed in the trench in the gap filler material. The replacement gate is recessed below a surface of the gap filler material. A gate cap is formed in the recess above the replacement gate. The gap filler material is etched back to expose at least a portion of the source and drain regions of the device. A salicide is formed on source and drain regions of the device.

主权项

1. A method of fabricating a field-effect transistor (FET) device, the method comprising the steps of:
forming at least one dummy gate over an active area of a wafer, wherein the dummy gate is formed over a portion of the active area which serves as a channel region of the device, and wherein portions of the active area extending out from under the dummy gate serve as source and drain regions of the device; forming spacers on opposite sides of the dummy gate; depositing a gap filler material around the dummy gate; removing the dummy gate selective to the gap filler material, forming a trench in the gap filler material; forming a replacement gate in the trench in the gap filler material; annealing the replacement gate at a temperature of from about 700° C. to about 1,300° C.; recessing the replacement gate below a surface of the gap filler material forming a recess in the gap filler material above the replacement gate; forming a gate cap in the recess above the replacement gate; etching back the gap filler material to expose at least a portion of the source and drain regions of the device; and forming a salicide on the source and drain regions of the device.