| 摘要 |
PROBLEM TO BE SOLVED: To adjust inductance distribution of input/output bonding wires or input/output transmission lines, match signal phases, enhance a gain and output power, and suppress oscillation caused by unbalanced operation of each FET cell.SOLUTION: A high-frequency semiconductor device 25 includes: an FET 24 having gate terminal electrodes G1 to G10, source terminal electrodes S1 to S11, and a drain terminal electrode D; an input circuit pattern 17 and an output circuit pattern 18 which are adjacent to the FET; a plurality of input bonding wires 12 and 12L which connect the gate terminal electrodes G1 to G10 and the input circuit pattern 17; and a plurality of output bonding wires 14 and 14L which connect the drain terminal electrode D and the output circuit pattern 18. The high-frequency semiconductor device 25 adjusts inductance distribution of the plurality of input bonding wires 12 and 12L, matches the phases of input signals, adjusts inductance distribution of the plurality of output bonding wires 14 and 14L, and matches the phases of output signals. |
